Транзистор 4410 чем заменить
Транзистор 4410 чем заменить
Наименование прибора: AO4410
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 3 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 72.4 nC
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 625 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0055 Ohm
AO4410 Datasheet (PDF)
0.1. ao4410.pdf Size:180K _aosemi
AO441030V N-Channel MOSFETGeneral Description Product SummaryThe AO4410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity,ID = 18A (VGS = 10V)body diode characteristics and ultra-low gateRDS(ON)
0.2. ao4410.pdf Size:1236K _kexin
SMD Type MOSFETN-Channel MOSFETAO4410 (KO4410)SOP-8 Features VDS (V) = 30V A (VGS = 10V) RDS(ON) 5.5m (VGS = 10V)1.50 0.15 RDS(ON) 6.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat
9.1. ao4413.pdf Size:561K _aosemi
9.2. ao4419.pdf Size:268K _aosemi
9.3. ao4411.pdf Size:608K _aosemi
9.4. ao4415.pdf Size:167K _aosemi
9.5. ao4413.pdf Size:2201K _kexin
9.6. ao4419.pdf Size:1480K _kexin
9.7. ao4418.pdf Size:1211K _kexin
SMD Type MOSFETN-Channel MOSFETAO4418 (KO4418)SOP-8 Features VDS (V) = 30V A (VGS = 20V) RDS(ON) 14m (VGS = 20)1.50 0.15 RDS(ON) 17m (VGS = 10V) RDS(ON) 40m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit D
9.8. ao4411.pdf Size:1241K _kexin
9.9. ao4415.pdf Size:1311K _kexin
Транзистор 4410 чем заменить
Наименование прибора: SSG4410N
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 13 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 412 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0135 Ohm
SSG4410N Datasheet (PDF)
0.1. ssg4410n.pdf Size:441K _secos
SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L Dmanagement in portable and battery-pow
9.1. ssg4407p.pdf Size:542K _secos
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SSG4490N 5.2 A, 100 V, RDS(ON) 78 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal Bpower loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered
9.5. ssg4435.pdf Size:657K _secos
SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. BPRODUCT SUMMARY PRODUCT SUMMARY L DVDSS(V) d RDS(on) m(Max ID(A)10@VGS= 10V M40 10 13@VGS= 4.5V A CNKJMARKING H G F EMillime
9.7. ssg4480n.pdf Size:619K _secos
9.8. ssg4434n.pdf Size:475K _secos
SSG4434N 18.6 A, 30 V, RDS(ON) 7 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L
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Транзистор 4410 чем заменить
Наименование прибора: 4410
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm
4410 Datasheet (PDF)
ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON)20m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored
0.3. 2n4410re.pdf Size:183K _motorola
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4410/DAmplifier TransistorNPN Silicon2N4410COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 29 04, STYLE 1
0.4. mp4410.pdf Size:95K _toshiba
MP4410 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (L2—MOSV 4 in 1) MP4410 Industrial Applications High Power, High Speed Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. 4 V gate drive available Small package by full molding (SIP 12 pin) High drain power dissipation (4 devices operation) : PT = 28 W
MP4410 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2—MOSV in One) MP4410 Industrial Applications High Power, High Speed Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (T
0.6. fds4410.pdf Size:110K _fairchild_semi
April 1998 FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V specifically to improve the overall efficiency of DC/DCRDS(ON) = 0.0200 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers.O
0.7. hp4410dy.pdf Size:148K _fairchild_semi
HP4410DYData Sheet December 200110A, 30V, 0.0135 Ohm, Single N-Channel, FeaturesLogic Level Power MOSFET Logic Level Gate DriveThis power MOSFET is manufactured using an innovative 10A, 30Vprocess. This advanced process technology achieves the rDS(ON) = 0.0135 at VGS = 10Vlowest possible on-resistance per silicon area, resulting in outstanding perform
0.8. 2n4410.pdf Size:294K _fairchild_semi
Discrete POWER & SignalTechnologies2N4410C TO-92BENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 50 mA. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VV
0.9. fds4410a.pdf Size:112K _fairchild_semi
May 2005FDS4410ASingle N-Channel, Logic-Level, PowerTrench MOSFETFeatures General Description 10 A, 30 V. RDS(ON) = 13.5 m @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using Fair-RDS(ON) = 20 m @ VGS = 4.5 V child Semiconductors advanced PowerTrench process that hasbeen especially tailored to minimize the on-state resistance and Fast switching speed
0.10. fqs4410tf.pdf Size:598K _fairchild_semi
May 2000TMQFETQFETQFETQFETFQS4410Single N-Channel, Logic Level, Power MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 30V, RDS(on) = 0.0135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 145 pF)This advanced t
0.11. fdr4410.pdf Size:220K _fairchild_semi
April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThe FDR4410 has been designed as a smaller, low cost9.3 A, 30 V. RDS(ON) = 0.013 @ VGS = 10 Valternative to the popular Si4410DY. RDS(ON) = 0.020 @ VGS = 4.5 V.High density cell design for extremely low RDS(ON).The SuperSOTTM-8 package is 40% smaller than the SO-8package
0.12. irfp4410zpbf.pdf Size:283K _international_rectifier
0.13. irfb4410.pdf Size:802K _international_rectifier
0.14. irfi4410zgpbf.pdf Size:228K _international_rectifier
0.15. irfi4410zpbf.pdf Size:315K _international_rectifier
0.16. si4410dy.pdf Size:93K _international_rectifier
0.17. irfb4410zgpbf.pdf Size:294K _international_rectifier
0.18. irfs4410pbf irfsl4410pbf.pdf Size:799K _international_rectifier
IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl
0.21. si4410dy.pdf Size:353K _vishay
SI4410DYN-channel TrenchMOS logic level FETRev. 03 4 December 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
0.22. si4410bdy.pdf Size:230K _vishay
Si4410BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0135 at VGS = 10 V 10 TrenchFET Power MOSFET300.020 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Battery Switch Load SwitchSO-8DS D1
0.23. sq4410ey.pdf Size:252K _vishay
SQ4410EYwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.012 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.020 Material categorization:ID (A) 15For definitions of compliance please see Configuration Singlewww
0.25. irfi4410zpbf.pdf Size:582K _infineon
IRFI4410ZPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 7.9m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 9.3mID 43A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac
0.27. si4410dypbf.pdf Size:119K _infineon
0.29. auirfb4410.pdf Size:278K _infineon
IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl
0.31. 2sc4410 e.pdf Size:41K _panasonic
Transistor2SC4410Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Allowing the small current and low voltage operation.High transition frequency fT.1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking. 2Absolute Maximum Ratings (Ta=25C
0.32. 2sc4410.pdf Size:37K _panasonic
Transistor2SC4410Silicon NPN epitaxial planer typeFor UHF amplificationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Allowing the small current and low voltage operation.High transition frequency fT.1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking. 2Absolute Maximum Ratings (Ta=25C
0.33. ut4410.pdf Size:218K _utc
UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTCs high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be
0.34. itc14410.pdf Size:98K _gec_plessey
0.35. ssg4410n.pdf Size:441K _secos
SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L Dmanagement in portable and battery-pow
0.36. tsm4410cs.pdf Size:121K _taiwansemi
0.37. tsm4410dcs.pdf Size:122K _taiwansemi
0.38. cjq4410.pdf Size:2370K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4410 N-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 13.5 10m@ V 7.5A30V 20m@ 4.5V DESCRIPTION The CJQ4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideall
0.39. cjd4410.pdf Size:180K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4410 N-Channel 30-V(D-S) MOSFET TO-2 51-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. DRAIN APPLICATIONS 3. SOURCE Load Switch Battery Switch Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage
0.40. pt4410.pdf Size:1554K _htsemi
PT441030V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5m RDS(ON), Vgs@4.5V, Ids@12A = 15m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D8 7 6 51 2 3 4S S S GMillimeter Millimeter
0.41. wt4410m.pdf Size:676K _wietron
WT4410M Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free10 AMPERS DRAIN SOUCE VOLTAGE Features: 30 VOLTAGE *Super high dense cell design for low R DS(ON) RDS(ON)
0.42. ao4410.pdf Size:180K _aosemi
AO441030V N-Channel MOSFETGeneral Description Product SummaryThe AO4410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity,ID = 18A (VGS = 10V)body diode characteristics and ultra-low gateRDS(ON)
AP4410GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VDD Fast Switching D RDS(ON) 13.5mD Simple Drive Requirement ID 10AGSSSO-8SDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-
AP4410MAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 30V DDFast Switching D RDS(ON) 13.5m DSimple Drive Requirement ID 10A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged
AP4410AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 13.5mDD Fast Switching Characteristic ID 10AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of
AP4410AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 13.5mDD Fast Switching Characteristic ID 10AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d
0.47. am4410n.pdf Size:203K _analog_power
Analog Power AM4410NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 13converters and power management in portable and 3020 @ VGS = 4.5V 11battery
0.48. 4410.pdf Size:1064K _shenzhen
0.49. mtn4410q8.pdf Size:305K _cystek
Spec. No. : C397Q8 Issued Date : 2007.06.14 CYStech Electronics Corp.Revised Date : 2014.01.23 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN4410Q8 Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and halogen-free package Symbol O
0.50. mtn4410v8.pdf Size:312K _cystek
Spec. No. : C397V8 Issued Date : 2012.03.14 CYStech Electronics Corp.Revised Date : 2012.03.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4410V8 Features Single Drive Requirement Low On-resistance Pb-free lead plating package Applications Synchronous rectifier for DC/DC converters Telecom secondary side rectification High end s
0.51. apm4410.pdf Size:207K _anpec
0.52. sdm4410.pdf Size:126K _samhop
GreenProductS DM4410S amHop Microelectronics C orp.Mar.01,2006 ver1.2N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.13.5 @ VG S = 10V30V 10AS urface Mount Package.20 @ VG S = 4.5VS O-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless
0.53. stm4410a.pdf Size:696K _samhop
S T M4410AS amHop Microelectronics C orp. J an 04 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.9.5 @ V G S = 10V30V 10AS urface Mount Package.21 @ V G S = 4.5VS O-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless other
STB4410GreenProductSTP4410aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).VDSS ID RDS(ON) (m) TypHigh power and current handling capability.100V 75A 7.0 @ VGS=10VTO-220 & TO-263 package.DGSTB SERIESSTP SERIESTO-263(DD-PAK)TO-
0.56. ftk4410d.pdf Size:505K _first_silicon
SEMICONDUCTORFTK4410DTECHNICAL DATAN-Channel MOSFET AIDESCRIPTIONCJThe FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERSThis device is suitable for use as a load switch A 6 50 0 2B 5 60 0 2or in PWM applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0
0.57. ftk4410.pdf Size:474K _first_silicon
0.58. ao4410.pdf Size:1236K _kexin
SMD Type MOSFETN-Channel MOSFETAO4410 (KO4410)SOP-8 Features VDS (V) = 30V A (VGS = 10V) RDS(ON) 5.5m (VGS = 10V)1.50 0.15 RDS(ON) 6.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat
0.59. si4410dy.pdf Size:1155K _kexin
SMD Type MOSFETN-Channel MOSFETSI4410DY (KI4410DY)SOP-8 Features VDS (V) = 30V A (VGS = 10V) 1.50 0.15 RDS(ON) 13.5m (VGS = 10V) RDS(ON) 20m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V
CHENMKO ENTERPRISE CO.,LTDCHM4410AJGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
0.61. chm4410bjgp.pdf Size:135K _chenmko
CHENMKO ENTERPRISE CO.,LTDCHM4410BJPTSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High pow
0.62. fhp4410a.pdf Size:258K _feihonltd
N N-CHANNEL MOSFETFHP4410A
0.63. mmn4410.pdf Size:198K _m-mos
MMN4410Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@18A = 5.5mRDS(ON), Vgs@4.5V, Ids@15A = 6.2mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFET
0.64. ssm4410m.pdf Size:135K _silicon_standard
SSM4410MN-CHANNEL ENHANCEMENT MODE POWER MOSFETLow on-resistance BV 30VDSSDDFast switching D RDS(ON) 13.5mD Simple drive requirement I 10ADGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GSThe SO-8 package is wid
0.65. asdm4410s.pdf Size:765K _ascend
0.66. et4410.pdf Size:841K _eternal
Eternal Semiconductor Inc.ET4410N-Channel Enhancement-Mode MOSFET (30V, 10A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.9 @ VGS = 10V, 10A13@ VGS = 4.5V, Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freePin 1 / 2 / 3: SourcePin 4: Gate
0.67. hsm4410.pdf Size:2056K _huashuo
HSM4410 Description Product Summary The HSM4410 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 9.5 m converter applications. ID 12 A The HSM4410 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gate C
0.68. irfb4410zg.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFB4410ZGIIRFB4410ZGFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)
0.69. irfb4410.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4410IIRFB4410FEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU
0.70. irfb4410z.pdf Size:251K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4410ZIIRFB4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
0.71. irfp4410z.pdf Size:243K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP4410ZIIRFP4410ZFEATURESStatic drain-source on-resistance:RDS(on)9.0mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power Supply
0.72. irfsl4410z.pdf Size:261K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
0.73. irfi4410z.pdf Size:256K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFI4410Z,IIRFI4410ZFEATURESLow drain-source on-resistance:RDS(on) 9.3m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
0.74. irfs4410z.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRFS4410ZFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
0.75. irfs4410.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRFS4410FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
0.76. irfsl4410.pdf Size:286K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFSL4410FEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME